Samsung has developed new 40-nanometer Compact Flash cards with incredible 16GB – 64GB storage capacities. This breakthrough was made possible using Charge Trap Flash (CTF) architecture, which “increases the reliability of the memory by sharply reducing inter-cell noise levels.” More information here.

Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm

[via DAPreview]

Samsung has developed new 40-nanometer Compact Flash cards with incredible 16GB – 64GB storage capacities. This breakthrough was made possible using Charge Trap Flash (CTF) architecture, which “increases the reliability of the memory by sharply reducing inter-cell noise levels.” More information here.

Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm

[via DAPreview]