It’s official, Micron UFS 4.0 storage is coming soon, built on the company’s advanced 232-layer 3D NAND and offered in high capacities up to 1 terabyte (TB). This produce is actually Micron’s first mobile solution to be manufactured on 232-layer triple-level cell (TLC) NAND, which provides 100% higher write bandwidth and 75% higher read bandwidth.
This 232-layer 3D NAND architecture provides more bits per square millimeter of silicon by stacking the NAND bit cell array into more layers, resulting in greater density, performance improvements and capacity growth. Featuring up to 4300 megabytes per second (MBps) sequential read and 4000 MBps sequential write speed, or twice the performance of previous generations, as well as being 25% more power-efficient. Micron is shipping samples of its new UFS 4.0 storage to mobile manufacturers now and high-volume production is expected to begin in Q2 2023.
- NVMe (PCIe Gen4 x4) technology with up to 5000MB/s sequential reads, random read/write 680K/850K IOPS.date transfer rate:5000.0...
- Spacious storage up to 4TB
- Performs up to 43% faster than the fastest Gen3 NVMe SSDs
Micron’s latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance. Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones,” said Mark Montierth, corporate vice president and general manager of Micron’s Mobile Business Unit.
