It’s official, Micron UFS 4.0 storage is coming soon, built on the company’s advanced 232-layer 3D NAND and offered in high capacities up to 1 terabyte (TB). This produce is actually Micron’s first mobile solution to be manufactured on 232-layer triple-level cell (TLC) NAND, which provides 100% higher write bandwidth and 75% higher read bandwidth.
This 232-layer 3D NAND architecture provides more bits per square millimeter of silicon by stacking the NAND bit cell array into more layers, resulting in greater density, performance improvements and capacity growth. Featuring up to 4300 megabytes per second (MBps) sequential read and 4000 MBps sequential write speed, or twice the performance of previous generations, as well as being 25% more power-efficient. Micron is shipping samples of its new UFS 4.0 storage to mobile manufacturers now and high-volume production is expected to begin in Q2 2023.
- Fast Everyday Performance: Delivers up to 5,000MB/s for quicker bootups, app launches, and file transfers
- Spacious 2TB Capacity: Provides space for essential apps, documents, and media with efficient Gen4 NVMe performance for home users
- Broad Compatibility: Works with PCIe Gen3-enabled desktops and laptops and is backward compatible for easy system upgrades at home
Micron’s latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance. Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones,” said Mark Montierth, corporate vice president and general manager of Micron’s Mobile Business Unit.
