Samsung introduces the industry’s first and highest-capacity 32-gigabit (Gb) DDR5 DRAM using 12 nanometer (nm)-class process technology, which follows the mass production of the company’s 12nm-class 16Gb DDR5 DRAM back in May 2023. This memory was developed using Samsung’s cutting-edge processes and technologies designed to increase integration density as well as design optimization.
This resulted in the industry’s highest capacity for a single DRAM chip and offers double the capacity of 16Gb DDR5 DRAM in the same-sized package. In the past, DDR5 128GB DRAM modules manufactured using 16Gb DRAM required the Through Silicon Via (TSV) process, but this latest module can now be produced without using the TSV process, while reducing power consumption by approximately 10%. The new 12-nm-class 32Gb DRAM modules are perfect for data centers as well as to customers that require applications like AI and next-generation computing.
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With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data. We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology,” said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics.
