Photo credit: SCMP
Forget standard hard drives, the rice grain-sized Poxiao is being touted as the world’s fastest flash memory, developed by researchers at Fudan University in China. It’s capable of erasing and rewriting data in just 400 picoseconds (one-trillionth of a second). That’s 100,000 times quicker than regular flash memory, breaking speed limits nobody thought could be beaten.
Tinier than a rice grain, the current test version only holds kilobytes of data—enough for a short text file but not a lot more. For now, its new design is all about being fast, not holding tons of data. Poxiao uses a special “2D-enhanced hot-carrier injection” method that allows electrons to move instantly, skipping the “warm-up” step that slows down the usual flash memory’s floating-gate transistors. This gets rid of delays, making it perfect for high-speed applications.
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This device could totally change AI computing and data storage by bridging the gap between memory and processing speeds. It’s designed to let AI systems read and write data as fast as they process it, potentially transforming storage architecture once scaled up.
It’s been 60 years since Bell Labs introduced the floating-gate transistor. If we had just stuck with traditional theories or relied on material changes, we wouldn’t have made any major breakthroughs. That is why we have focused on developing a completely new approach to flash memory,” said Liu Chunsen, project leader from Fudan University.
[Source]
